- A technique for growing epitaxial layers, in which the material to be deposited upon the substrate crystal is contained in a molecular or atomic beam. The procedure is carried out under an ultra-high vacuum, and can be used to form very precise and intricate layers as thin as single molecules or atoms. Used, for instance, in the preparation of semiconductors and sophisticated optoelectronic devices. Its abbreviation is MBE.
- acronym MBE
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