• Acronym for metal-oxide semiconductor. A unipolar three-layer semiconductor in which there is a thin metal oxide layer between the metal contacts and the substrate. For instance, a silicon dioxide insulating layer may be sandwiched between the metal contacts and a silicon substrate. This arrangement is widely seen, for instance, in MOSFETs. There are various MOS technologies, including CMOS, DMOS, HMOS, LDMOS, NMOS, and PMOS.
  • acronym for metal-oxide semiconductor
  • noun a production and design method for a certain family of integrated circuits using patterns of metal conductors and oxide deposited onto a semiconductor.

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